Formation of a K-In-Se Surface Species by NaF/KF Postdeposition Treatment of Cu(In,Ga)Se2 Thin-film Solar Cell Absorbers

Authors

• Evelyn Handick, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB)
• Patrick Reinhard, Empa-Swiss Federal Laboratories for Materials and Science and Technology
• Regan G. Wilks, Germany, Energy Materials In-Situ Laboratory Berlin
• Fabian Pianezzi, Empa-Swiss Federal Laboratories for Materials and Science and Technology
• Thomas Kunze, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB)
• Dagmar Kreikemeyer Lorenzo, Institute for Photon Science and Synchrotron Radiation (IPS)
• Lothar Weinhardt, University of Nevada, Las Vegas
• Monika Blum, University of Nevada, Las Vegas
• Wanli Yang, Lawrence Berkeley National Laboratory
• Mihaela Gorgoi, Institute for Nanospectroscopy
• Eiji Ikenaga, SPring-8/JASRI
• Dominic Gerlach, National Institute for Materials Science
• Shigenori Ueda, National Institute for Materials Science
• Yoshiyuki Yamashita, Institute for Materials Science
• Toyohiro Chikyow, National Institute for Materials Science
• Clemens Heske, University of Nevada, Las VegasFollow
• Stephan Buecheler, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
• Ayodhya N. Tiwari, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
• Marcus Bär, Brandenburgische Technische Universität Cottbus-Senftenberg

Document Type

Article

Publication Date

1-6-2017

Publication Title

ACS Applied Materials and Interfaces

Volume

9

Issue

4

First page number:

3581

Last page number:

3589

Abstract

A NaF/KF postdeposition treatment (PDT) has recently been employed to achieve new record efficiencies of Cu(In,Ga)Se2 (CIGSe) thin film solar cells. We have used a combination of depth-dependent soft and hard X-ray photoelectron spectroscopy as well as soft X-ray absorption and emission spectroscopy to gain detailed insight into the chemical structure of the CIGSe surface and how it is changed by different PDTs. Alkali-free CIGSe, NaF-PDT CIGSe, and NaF/KF-PDT CIGSe absorbers grown by low-temperature coevaporation have been interrogated. We find that the alkali-free and NaF-PDT CIGSe surfaces both display the well-known Cu-poor CIGSe chemical surface structure. The NaF/KF-PDT, however, leads to the formation of bilayer structure in which a K-In-Se species covers the CIGSe compound that in composition is identical to the chalcopyrite structure of the alkali-free and NaF-PDT absorber. © 2017 American Chemical Society.

File Format

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File Size

1721 KB

Language

english

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Repository Citation

Handick, E., Reinhard, P., Wilks, R. G., Pianezzi, F., Kunze, T., Kreikemeyer Lorenzo, D., Weinhardt, L., Blum, M., Yang, W., Gorgoi, M., Ikenaga, E., Gerlach, D., Ueda, S., Yamashita, Y., Chikyow, T., Heske, C., Buecheler, S., Tiwari, A. N., Bär, M. (2017). Formation of a K-In-Se Surface Species by NaF/KF Postdeposition Treatment of Cu(In,Ga)Se2 Thin-film Solar Cell Absorbers. ACS Applied Materials and Interfaces, 9(4), 3581-3589.
http://dx.doi.org/10.1021/acsami.6b11892